au.\*:("LINDQUIST PF")
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A MODEL RELATING ELECTRICAL PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS.LINDQUIST PF.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 3; PP. 1262-1267; BIBL. 32 REF.Article
PHOTOCAPACITANCE EFFECTS AT A CU2S-CDS HETEROJUNCTIONLINDQUIST PF; BUBE RH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2839-2850; BIBL. 13 REF.Serial Issue
PREPARATION AND PROPERTIES OF NONHEAT-TREATED SINGLE CRYSTAL CU2S-CDS HETEROJUNCTIONSLINDQUIST PF; BUBE RH.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 7; PP. 936-944; BIBL. 32 REF.Serial Issue
ANALYSIS OF ROOM-TEMPERATURE LUMINESCENCE SPECTRA OF VPE-GROWN NITROGEN-DOPED GALLIUM PHOSPHIDE.LINDQUIST PF; LARSEN TL.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 3; PP. 567-590; BIBL. 16 REF.Article
LIQUID PHASE EPITAXIAL GROWTH OF GAXIN1-XPSTRINGFELLOW GB; LINDQUIST PF; BURMEISTER RA et al.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 437-457; BIBL. 2 P. 1/2Serial Issue